The indices of refraction of molecular-beam epitaxy-grown BexZn1-xTe ternary alloys

F. C. Peiris, M. R. Buckley, O. Maksimov, M. Munoz, M. C. Tamargo

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have used a combination of prism-coupling, reflectivity, and ellipsometric techniques to investigate the indices of refraction, n, of a series of BexZn1-xTe thin films grown on InP substrates. After determining the concentrations of each of the BexZn1-xTe alloys using x-ray diffraction measurements, we measured their n at discrete wavelengths using a prism-coupler setup. In addition, we used reflectivity measurements to complement the prism-coupler data and arrive at the dispersion relations of n for the BexZn1-xTe alloys below their fundamental energy gaps. We then employed a rotating analyzer-spectroscopic ellipsometer to measure the complex reflection ratio for each of the films at angles of incidence of 65°, 70°, and 75°. By using the n values obtained from both the prism-coupler and the reflection-spectroscopy techniques to guide the ellipsometric analysis, we were able to obtain accurate results for the dispersion of n for the BexZn1-xTe alloys, not only below their fundamental energy gaps, but also above their energy gaps (up to 6.5 eV) using these three complementary techniques.

Original languageEnglish (US)
Pages (from-to)742-746
Number of pages5
JournalJournal of Electronic Materials
Volume32
Issue number7
DOIs
StatePublished - Jul 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • BeZnTe
  • Ellipsometry
  • Index of refraction
  • Molecular-beam epitaxy (MBE)
  • Prism coupler
  • Reflectivity

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