The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd 1−x Zn x Te films

Yibin Shen, Jian Huang, Qingmiao Gu, Hua Meng, Ke Tang, Yue Shen, Jijun Zhang, Linjun Wang, Yicheng Lu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work, high quality Cd 1−x Zn x Te films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd 1−x Zn x Te films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd 1−x Zn x Te structure. The results show a low contact resistivity of 0.37 Ω cm 2 for Au/GZO contacts on Cd 1−x Zn x Te films. Cd 1−x Zn x Te film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241 Am γ-ray source for the first time.

Original languageEnglish (US)
Pages (from-to)176-179
Number of pages4
JournalApplied Surface Science
Volume425
DOIs
StatePublished - Dec 15 2017

Fingerprint

Ohmic contacts
electric contacts
interlayers
Radiation detectors
electrical resistivity
Fluorine
radiation detectors
Sublimation
Contact resistance
contact resistance
Tin oxides
sublimation
tin oxides
transmission lines
fluorine
Electric lines
rays
Glass
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Cd Zn Te
  • Circular transmission line model
  • Radiation detector
  • ZnO

Cite this

Shen, Yibin ; Huang, Jian ; Gu, Qingmiao ; Meng, Hua ; Tang, Ke ; Shen, Yue ; Zhang, Jijun ; Wang, Linjun ; Lu, Yicheng. / The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd 1−x Zn x Te films In: Applied Surface Science. 2017 ; Vol. 425. pp. 176-179.
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The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd 1−x Zn x Te films . / Shen, Yibin; Huang, Jian; Gu, Qingmiao; Meng, Hua; Tang, Ke; Shen, Yue; Zhang, Jijun; Wang, Linjun; Lu, Yicheng.

In: Applied Surface Science, Vol. 425, 15.12.2017, p. 176-179.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd 1−x Zn x Te films

AU - Shen, Yibin

AU - Huang, Jian

AU - Gu, Qingmiao

AU - Meng, Hua

AU - Tang, Ke

AU - Shen, Yue

AU - Zhang, Jijun

AU - Wang, Linjun

AU - Lu, Yicheng

PY - 2017/12/15

Y1 - 2017/12/15

N2 - In this work, high quality Cd 1−x Zn x Te films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd 1−x Zn x Te films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd 1−x Zn x Te structure. The results show a low contact resistivity of 0.37 Ω cm 2 for Au/GZO contacts on Cd 1−x Zn x Te films. Cd 1−x Zn x Te film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241 Am γ-ray source for the first time.

AB - In this work, high quality Cd 1−x Zn x Te films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd 1−x Zn x Te films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd 1−x Zn x Te structure. The results show a low contact resistivity of 0.37 Ω cm 2 for Au/GZO contacts on Cd 1−x Zn x Te films. Cd 1−x Zn x Te film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241 Am γ-ray source for the first time.

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