The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd 1−x Zn x Te films

Yibin Shen, Jian Huang, Qingmiao Gu, Hua Meng, Ke Tang, Yue Shen, Jijun Zhang, Linjun Wang, Yicheng Lu

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this work, high quality Cd 1−x Zn x Te films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd 1−x Zn x Te films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd 1−x Zn x Te structure. The results show a low contact resistivity of 0.37 Ω cm 2 for Au/GZO contacts on Cd 1−x Zn x Te films. Cd 1−x Zn x Te film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241 Am γ-ray source for the first time.

Original languageEnglish (US)
Pages (from-to)176-179
Number of pages4
JournalApplied Surface Science
Volume425
DOIs
StatePublished - Dec 15 2017

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Cd Zn Te
  • Circular transmission line model
  • Radiation detector
  • ZnO

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