The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

K. J. Reeson, A. K. Robinson, P. L.F. Hemment, C. D. Marsh, K. N. Christensen, G. R. Booker, R. J. Chater, J. A. Kilner, G. Harbeke, E. F. Steigmeir, G. K. Celler

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Abstract

Single-crystal {leftwards paired arrows}100{left arrow, hooked} silicon wafers have been implanted with 200 keV oxygen ions over a dose range of 0.1×1018 O+ cm-2 to 1.4×1018 O+ cm-2 and a temperature range of ≈250°C to 550°C. The specimens have been analyzed, both before and after high-temperature annealing, using a variety of techniques, such as cross-sectional and planar Transmission Electron Microscopy (TEM), Rutherford backscattering (RBS), and ion channelling, Secondary Ion Mass Spectroscopy (SIMS), Infra-red Spectroscopy (IR), and Raman Spectroscopy. This has enabled us to evaluate the development of the SIMOX structure both with respect to implantation temperature and dose and also with respect to annealing temperature and time.

Original languageEnglish (US)
Pages (from-to)163-186
Number of pages24
JournalMicroelectronic Engineering
Volume8
Issue number3-4
DOIs
Publication statusPublished - Jan 1 1988
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Beam synthesis
  • SIMOX
  • SOI
  • oxygen implantation

Cite this

Reeson, K. J., Robinson, A. K., Hemment, P. L. F., Marsh, C. D., Christensen, K. N., Booker, G. R., ... Celler, G. K. (1988). The role of implantation temperature and dose in the control of the microstructure of SIMOX structures. Microelectronic Engineering, 8(3-4), 163-186. https://doi.org/10.1016/0167-9317(88)90015-9