Abstract
A study of the structure of thin Cu coatings on ultrathin SiO2 films grown on Si(111) is reported. Cu growth takes place in islands, and after annealing to 625 K or above, the Cu overlayer diffuses into the substrate. These results are similar to recently reported results for Ni overlayers. Unlike Ni, however, the Cu atoms occupy interstitial sites in the Si lattice.
Original language | English (US) |
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Pages (from-to) | 21-27 |
Number of pages | 7 |
Journal | Surface Science |
Volume | 372 |
Issue number | 1-3 |
DOIs | |
State | Published - Feb 10 1997 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Keywords
- Copper
- Medium energy ion scattering (MEIS)
- Nickel
- Silicon
- Silicon oxides