Thermal chemistry of chlorine on Si/Cu(100)

J. Han, S. I. Gheyas, Y. Wang, D. R. Strongin, B. J. Hinch, A. P. Wright

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Photoelectron spectroscopy (PES) and temperature-programmed desorption (TPD) studies investigated the chemistry of Cl2 on Si/Cu(100). Si deposition was carried out by exposing Cu(100) to SiH4 at 420 K. PES showed that the exposure of this Si-saturated surface to Cl2 resulted in the formation of SiCl, SiCl2, and SiCl3 species at 120 K, with the latter species becoming more prevalent at higher Cl coverages. Heating of the chlorinated surface between 120 and 500 K increased the concentration of SiCl3 species. TPD studies of Cl2/Si/Cu(100) as a function of Si coverage showed primarily SiCl3 (and probably SiCl2) desorption at the lower Si coverages and SiCl4 at the highest Si coverage. The majority of the Si was not removed from the surface as chlorosilane product, but instead diffused into the Cu bulk at temperatures above 500 K.

Original languageEnglish (US)
Pages (from-to)6541-6545
Number of pages5
JournalLangmuir
Volume16
Issue number16
DOIs
StatePublished - Aug 8 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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