Thermal decomposition behavior of the HfO2/SiO2/Si system

S. Sayan, E. Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, G. D. Wilk

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

Original languageEnglish (US)
Pages (from-to)928-934
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
StatePublished - Jul 15 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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