Thermal stability of W ohmic contacts to n-type GaN

M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, Y. Lu

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W was found to produce low specific contact resistance (ρc∼8.0×10-5 Ωcm2) ohmic contacts to n+-GaN (n = 1.5×1019 cm-3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β-W2N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 Å) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications.

Original languageEnglish (US)
Pages (from-to)278-281
Number of pages4
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 1 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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