Thermal stability of W ohmic contacts to n-type GaN

M. W. Cole; D. W. Eckart; W. Y. Han; R. L. Pfeffer; T. Monahan; F. Ren; C. Yuan; R. A. Stall; S. J. Pearton; Y. Li; Y. Lu

doi:10.1063/1.362816

Thermal stability of W ohmic contacts to n-type GaN

M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, Y. Lu

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

W was found to produce low specific contact resistance (ρ_c∼8.0×10^-5 Ωcm₂) ohmic contacts to n⁺-GaN (n = 1.5×10¹⁹ cm^-3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β-W₂N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 Å) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n⁺-GaN for high temperature applications.

Original language	English (US)
Pages (from-to)	278-281
Number of pages	4
Journal	Journal of Applied Physics
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.362816
State	Published - Jul 1 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Thermal stability of W ohmic contacts to n-type GaN",

abstract = "W was found to produce low specific contact resistance (ρc∼8.0×10-5 Ωcm2) ohmic contacts to n+-GaN (n = 1.5×1019 cm-3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β-W2N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 {\AA}) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications.",

author = "Cole, {M. W.} and Eckart, {D. W.} and Han, {W. Y.} and Pfeffer, {R. L.} and T. Monahan and F. Ren and C. Yuan and Stall, {R. A.} and Pearton, {S. J.} and Y. Li and Y. Lu",

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doi = "10.1063/1.362816",

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TY - JOUR

T1 - Thermal stability of W ohmic contacts to n-type GaN

AU - Cole, M. W.

AU - Eckart, D. W.

AU - Han, W. Y.

AU - Pfeffer, R. L.

AU - Monahan, T.

AU - Ren, F.

AU - Yuan, C.

AU - Stall, R. A.

AU - Pearton, S. J.

AU - Li, Y.

AU - Lu, Y.

PY - 1996/7/1

Y1 - 1996/7/1

N2 - W was found to produce low specific contact resistance (ρc∼8.0×10-5 Ωcm2) ohmic contacts to n+-GaN (n = 1.5×1019 cm-3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β-W2N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 Å) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications.

AB - W was found to produce low specific contact resistance (ρc∼8.0×10-5 Ωcm2) ohmic contacts to n+-GaN (n = 1.5×1019 cm-3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β-W2N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 Å) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications.

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DO - 10.1063/1.362816

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Thermal stability of W ohmic contacts to n-type GaN

Abstract

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