THICK FILMS FOR DIELECTRIC ISOLATION BY LATERAL EPITAXY FROM THE MELT.

G. K. Celler, L. E. Trimble

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Dielectric isolation (DI) technology has been available for almost twenty years. It was first developed for low capacitance, high speed circuits, and was later adapted to radiation hardened devices and for high voltage isolation. The authors describe a new method of forming DI structures that simplifies wafer fabrication, reduces the density of process induced defects, and may lead to a more flexible device design. The process is based on recrystallization from the melt of thick Si films deposited over oxidized Si wafers, with a regular array of seeding windows opened in the isolation oxide. The recrystallized films are free of grain boundaries and subboundaries.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, Noble M. Johnson
PublisherNorth-Holland
Pages567-577
Number of pages11
ISBN (Print)0444009035
StatePublished - 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume23
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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