Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates

William Kurt Simon, E. Koray Akdogan, Jeffery Bellotti, Ahmad Safari

Research output: Contribution to journalConference article

Abstract

Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

Original languageEnglish (US)
Pages (from-to)327-331
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume784
StatePublished - Dec 1 2003
EventFerroelectric Thin Films XII - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

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Dielectric properties
Film thickness
dielectric properties
Q factors
film thickness
Microwaves
microwaves
Thin films
Substrates
Pulsed laser deposition
thin films
Topography
pulsed laser deposition
crystallinity
capacitors
topography
Capacitors
Permittivity
atomic force microscopy
permittivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates",
abstract = "Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45{\%} was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.",
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language = "English (US)",
volume = "784",
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journal = "Materials Research Society Symposium - Proceedings",
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publisher = "Materials Research Society",

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Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates. / Simon, William Kurt; Akdogan, E. Koray; Bellotti, Jeffery; Safari, Ahmad.

In: Materials Research Society Symposium - Proceedings, Vol. 784, 01.12.2003, p. 327-331.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates

AU - Simon, William Kurt

AU - Akdogan, E. Koray

AU - Bellotti, Jeffery

AU - Safari, Ahmad

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

AB - Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

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