Abstract
Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 327-331 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 784 |
| State | Published - Dec 1 2003 |
| Event | Ferroelectric Thin Films XII - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates. / Simon, William Kurt; Akdogan, E. Koray; Bellotti, Jeffery; Safari, Ahmad.
In: Materials Research Society Symposium - Proceedings, Vol. 784, 01.12.2003, p. 327-331.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates
AU - Simon, William Kurt
AU - Akdogan, E. Koray
AU - Bellotti, Jeffery
AU - Safari, Ahmad
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.
AB - Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.
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M3 - Conference article
AN - SCOPUS:2942657599
VL - 784
SP - 327
EP - 331
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -