Thickness and strain effects on RF/microwave properties of BST thin films on NdGaO 3 substrates

William Kurt Simon, E. Koray Akdogan, Jeffery Bellotti, Ahmad Safari

Research output: Contribution to journalConference article


Ba 0.60Sr 0.40TiO 3 thin films were deposited on 〈100〉 oriented NdGaO 3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently 〈110〉 textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1-20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline 〈110〉 textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

Original languageEnglish (US)
Pages (from-to)327-331
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Dec 1 2003
EventFerroelectric Thin Films XII - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this