Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi2Se3

Yong Seung Kim, Matthew Brahlek, Namrata Bansal, Eliav Edrey, Gary A. Kapilevich, Keiko Iida, Makoto Tanimura, Yoichi Horibe, Sang Wook Cheong, Seongshik Oh

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243 Scopus citations

Abstract

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm-170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak antilocalization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.

Original languageEnglish (US)
Article number073109
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number7
DOIs
StatePublished - Aug 26 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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