Thickness-independent transport channels in topological insulator Bi 2Se 3 thin films

Namrata Bansal, Yong Seung Kim, Matthew Brahlek, Eliav Edrey, Seongshik Oh

Research output: Contribution to journalArticlepeer-review

294 Scopus citations


With high quality topological insulator Bi 2Se 3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8QL (where QL refers to quintuple layer, 1QL1nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×1013cm -2 down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×1012cm -2 only down to ∼8QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.

Original languageEnglish (US)
Article number116804
JournalPhysical review letters
Issue number11
StatePublished - Sep 12 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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