Thin PSG process for 4H-SiC MOSFET

Y. K. Sharma; A. C. Ahyi; T. Issacs-Smith; A. Modic; Y. Xu; E. Garfunkel; M. R. Jennings; C. Fisher; S. M. Thomas; P. Mawby; S. Dhar; L. C. Feldman; J. R. Williams

doi:10.4028/www.scientific.net/MSF.778-780.513

Thin PSG process for 4H-SiC MOSFET

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, A. Modic, Y. Xu, E. Garfunkel, M. R. Jennings, C. Fisher, S. M. Thomas, P. Mawby, S. Dhar, L. C. Feldman, J. R. Williams

Rutgers Global

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The use of phosphorous as a passivating agent for the SiO₂/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm²/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP₂O₇ planar diffusion source is used to produce P₂O₅ for the passivation of the interface. Incorporation of phosphorous into SiO₂ leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm²/V.s.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2013
Editors	Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Publisher	Trans Tech Publications Ltd
Pages	513-516
Number of pages	4
ISBN (Print)	9783038350101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.513
State	Published - 2014
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: Sep 29 2013 → Oct 4 2013

Publication series

Name	Materials Science Forum
Volume	778-780
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/Territory	Japan
City	Miyazaki
Period	9/29/13 → 10/4/13

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Bias-temperature stress
Channel mobility
Interface traps
Phosphosilicate glass
Threshold voltage stability

Access to Document

10.4028/www.scientific.net/MSF.778-780.513

Cite this

Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Modic, A., Xu, Y., Garfunkel, E., Jennings, M. R., Fisher, C., Thomas, S. M., Mawby, P., Dhar, S., Feldman, L. C., & Williams, J. R. (2014). Thin PSG process for 4H-SiC MOSFET. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 513-516). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.513

Sharma, Y. K. ; Ahyi, A. C. ; Issacs-Smith, T. et al. / Thin PSG process for 4H-SiC MOSFET. Silicon Carbide and Related Materials 2013. editor / Hajime Okumura ; Hajime Okumura ; Hiroshi Harima ; Tsunenobu Kimoto ; Masahiro Yoshimoto ; Heiji Watanabe ; Tomoaki Hatayama ; Hideharu Matsuura ; Yasuhisa Sano ; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. pp. 513-516 (Materials Science Forum).

@inproceedings{f223d752d32f4256bf7270a96b960a05,

title = "Thin PSG process for 4H-SiC MOSFET",

abstract = "The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.",

keywords = "Bias-temperature stress, Channel mobility, Interface traps, Phosphosilicate glass, Threshold voltage stability",

author = "Sharma, {Y. K.} and Ahyi, {A. C.} and T. Issacs-Smith and A. Modic and Y. Xu and E. Garfunkel and Jennings, {M. R.} and C. Fisher and Thomas, {S. M.} and P. Mawby and S. Dhar and Feldman, {L. C.} and Williams, {J. R.}",

year = "2014",

doi = "10.4028/www.scientific.net/MSF.778-780.513",

language = "English (US)",

isbn = "9783038350101",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "513--516",

editor = "Hajime Okumura and Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",

booktitle = "Silicon Carbide and Related Materials 2013",

note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

}

Sharma, YK, Ahyi, AC, Issacs-Smith, T, Modic, A, Xu, Y, Garfunkel, E, Jennings, MR, Fisher, C, Thomas, SM, Mawby, P, Dhar, S, Feldman, LC & Williams, JR 2014, Thin PSG process for 4H-SiC MOSFET. in H Okumura, H Okumura, H Harima, T Kimoto, M Yoshimoto, H Watanabe, T Hatayama, H Matsuura, Y Sano & T Funaki (eds), Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 513-516, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.513

Thin PSG process for 4H-SiC MOSFET. / Sharma, Y. K.; Ahyi, A. C.; Issacs-Smith, T. et al.

Silicon Carbide and Related Materials 2013. ed. / Hajime Okumura; Hajime Okumura; Hiroshi Harima; Tsunenobu Kimoto; Masahiro Yoshimoto; Heiji Watanabe; Tomoaki Hatayama; Hideharu Matsuura; Yasuhisa Sano; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. p. 513-516 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thin PSG process for 4H-SiC MOSFET

AU - Sharma, Y. K.

AU - Ahyi, A. C.

AU - Issacs-Smith, T.

AU - Modic, A.

AU - Xu, Y.

AU - Garfunkel, E.

AU - Jennings, M. R.

AU - Fisher, C.

AU - Thomas, S. M.

AU - Mawby, P.

AU - Dhar, S.

AU - Feldman, L. C.

AU - Williams, J. R.

PY - 2014

Y1 - 2014

N2 - The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.

AB - The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.

KW - Bias-temperature stress

KW - Channel mobility

KW - Interface traps

KW - Phosphosilicate glass

KW - Threshold voltage stability

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U2 - 10.4028/www.scientific.net/MSF.778-780.513

DO - 10.4028/www.scientific.net/MSF.778-780.513

M3 - Conference contribution

AN - SCOPUS:84896093127

SN - 9783038350101

T3 - Materials Science Forum

SP - 513

EP - 516

BT - Silicon Carbide and Related Materials 2013

A2 - Okumura, Hajime

A2 - Harima, Hiroshi

A2 - Kimoto, Tsunenobu

A2 - Yoshimoto, Masahiro

A2 - Watanabe, Heiji

A2 - Hatayama, Tomoaki

A2 - Matsuura, Hideharu

A2 - Sano, Yasuhisa

A2 - Funaki, Tsuyoshi

PB - Trans Tech Publications Ltd

T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

Y2 - 29 September 2013 through 4 October 2013

ER -

Sharma YK, Ahyi AC, Issacs-Smith T, Modic A, Xu Y, Garfunkel E et al. Thin PSG process for 4H-SiC MOSFET. In Okumura H, Okumura H, Harima H, Kimoto T, Yoshimoto M, Watanabe H, Hatayama T, Matsuura H, Sano Y, Funaki T, editors, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd. 2014. p. 513-516. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.778-780.513

Thin PSG process for 4H-SiC MOSFET

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

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