Thin PSG process for 4H-SiC MOSFET

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, A. Modic, Y. Xu, E. Garfunkel, M. R. Jennings, C. Fisher, S. M. Thomas, P. Mawby, S. Dhar, L. C. Feldman, J. R. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2013
EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783038350101
StatePublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: Sep 29 2013Oct 4 2013

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Bias-temperature stress
  • Channel mobility
  • Interface traps
  • Phosphosilicate glass
  • Threshold voltage stability


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