Topological Phase Transition with Nanoscale Inhomogeneity in (Bi1- xInx)2Se3

Wenhan Zhang, Mingxing Chen, Jixia Dai, Xueyun Wang, Zhicheng Zhong, Sang-Wook Cheong, Weida Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Topological insulators are a class of band insulators with nontrivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In-doped Bi2Se3. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

Original languageEnglish (US)
Pages (from-to)2677-2682
Number of pages6
JournalNano Letters
Volume18
Issue number4
DOIs
StatePublished - Apr 11 2018

Fingerprint

inhomogeneity
Phase transitions
insulators
Orbits
Scanning tunneling microscopy
Electron transitions
Phase separation
Energy gap
Tuning
Topology
Single crystals
Spectroscopy
disorders
inversions
orbits
Imaging techniques
suppressors
Defects
closures
scanning tunneling microscopy

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Zhang, Wenhan ; Chen, Mingxing ; Dai, Jixia ; Wang, Xueyun ; Zhong, Zhicheng ; Cheong, Sang-Wook ; Wu, Weida. / Topological Phase Transition with Nanoscale Inhomogeneity in (Bi1- xInx)2Se3. In: Nano Letters. 2018 ; Vol. 18, No. 4. pp. 2677-2682.
@article{98ca9a1e96de40f0bafb2e6487965bd9,
title = "Topological Phase Transition with Nanoscale Inhomogeneity in (Bi1- xInx)2Se3",
abstract = "Topological insulators are a class of band insulators with nontrivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In-doped Bi2Se3. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective {"}suppressors{"} of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the {"}transition{"}. The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.",
author = "Wenhan Zhang and Mingxing Chen and Jixia Dai and Xueyun Wang and Zhicheng Zhong and Sang-Wook Cheong and Weida Wu",
year = "2018",
month = "4",
day = "11",
doi = "10.1021/acs.nanolett.8b00597",
language = "English (US)",
volume = "18",
pages = "2677--2682",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "4",

}

Topological Phase Transition with Nanoscale Inhomogeneity in (Bi1- xInx)2Se3. / Zhang, Wenhan; Chen, Mingxing; Dai, Jixia; Wang, Xueyun; Zhong, Zhicheng; Cheong, Sang-Wook; Wu, Weida.

In: Nano Letters, Vol. 18, No. 4, 11.04.2018, p. 2677-2682.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Topological Phase Transition with Nanoscale Inhomogeneity in (Bi1- xInx)2Se3

AU - Zhang, Wenhan

AU - Chen, Mingxing

AU - Dai, Jixia

AU - Wang, Xueyun

AU - Zhong, Zhicheng

AU - Cheong, Sang-Wook

AU - Wu, Weida

PY - 2018/4/11

Y1 - 2018/4/11

N2 - Topological insulators are a class of band insulators with nontrivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In-doped Bi2Se3. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

AB - Topological insulators are a class of band insulators with nontrivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In-doped Bi2Se3. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

UR - http://www.scopus.com/inward/record.url?scp=85045188748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045188748&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b00597

DO - 10.1021/acs.nanolett.8b00597

M3 - Article

C2 - 29582663

AN - SCOPUS:85045188748

VL - 18

SP - 2677

EP - 2682

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 4

ER -