Towards temperature-stable level shifters

Yi Huang, Fanpeng Kong, Laleh Najafizadeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A family of temperature stable level shifter circuits, covering a wide range of voltage level shifts, is presented in this paper. Design analysis is provided for both shift-up and shift-down circuits. Circuits are designed in 0.13 μm BiCMOS technology, and simulation results are presented.

Original languageEnglish (US)
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
StatePublished - Mar 13 2014
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: Jun 18 2014Jun 20 2014

Publication series

Name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Other

Other2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/TerritoryChina
CityChengdu
Period6/18/146/20/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Keywords

  • BiCMOS
  • Lever shifters
  • Temperature stability

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