Tunable dielectric properties of BST thin films for RF/MW passive components

Jeffrey Bellotti, E. Koray Akdogan, Ahmad Safari, Wontae Chang, Steven Kirchoefer

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Heteroepitaxial Ba0.6Sr0.4TiO3 films were deposited on (100) LaAlO3 and (100) MgO substrates via pulsed laser deposition. Film thickness varied from 22 nm to 1.15 μm. All films were examined with x-ray diffraction and cross-section FESEM to determine both epitaxy and thickness, and stoichiometry was confirmed with RBS measurements. Microwave dielectric measurements were carried out in the range of 1-20 GHz, using an interdigitated electrode array. The state of strain in the films as a function of thickness and substrate type was correlated with the observed capacitive tunability. The runability for both film series was shown to exhibit markedly different behavior depending on the type of strain, compressive or tensile. Maximum dielectric tunabilities of ∼ 65% were achieved for the thickest films in both film sets, however the tunability of the thinnest films were much higher for the films grown on MgO.

Original languageEnglish (US)
Pages (from-to)113-122
Number of pages10
JournalIntegrated Ferroelectrics
Volume49
DOIs
StatePublished - Jan 1 2002

Fingerprint

Dielectric properties
dielectric properties
Thin films
thin films
Substrates
Pulsed laser deposition
Epitaxial growth
Thick films
Stoichiometry
epitaxy
pulsed laser deposition
thick films
Film thickness
stoichiometry
x ray diffraction
film thickness
Diffraction
Microwaves
microwaves
X rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • BST thin films
  • Microwave dielectric properties
  • Strain effects

Cite this

Bellotti, Jeffrey ; Akdogan, E. Koray ; Safari, Ahmad ; Chang, Wontae ; Kirchoefer, Steven. / Tunable dielectric properties of BST thin films for RF/MW passive components. In: Integrated Ferroelectrics. 2002 ; Vol. 49. pp. 113-122.
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Tunable dielectric properties of BST thin films for RF/MW passive components. / Bellotti, Jeffrey; Akdogan, E. Koray; Safari, Ahmad; Chang, Wontae; Kirchoefer, Steven.

In: Integrated Ferroelectrics, Vol. 49, 01.01.2002, p. 113-122.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tunable dielectric properties of BST thin films for RF/MW passive components

AU - Bellotti, Jeffrey

AU - Akdogan, E. Koray

AU - Safari, Ahmad

AU - Chang, Wontae

AU - Kirchoefer, Steven

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N2 - Heteroepitaxial Ba0.6Sr0.4TiO3 films were deposited on (100) LaAlO3 and (100) MgO substrates via pulsed laser deposition. Film thickness varied from 22 nm to 1.15 μm. All films were examined with x-ray diffraction and cross-section FESEM to determine both epitaxy and thickness, and stoichiometry was confirmed with RBS measurements. Microwave dielectric measurements were carried out in the range of 1-20 GHz, using an interdigitated electrode array. The state of strain in the films as a function of thickness and substrate type was correlated with the observed capacitive tunability. The runability for both film series was shown to exhibit markedly different behavior depending on the type of strain, compressive or tensile. Maximum dielectric tunabilities of ∼ 65% were achieved for the thickest films in both film sets, however the tunability of the thinnest films were much higher for the films grown on MgO.

AB - Heteroepitaxial Ba0.6Sr0.4TiO3 films were deposited on (100) LaAlO3 and (100) MgO substrates via pulsed laser deposition. Film thickness varied from 22 nm to 1.15 μm. All films were examined with x-ray diffraction and cross-section FESEM to determine both epitaxy and thickness, and stoichiometry was confirmed with RBS measurements. Microwave dielectric measurements were carried out in the range of 1-20 GHz, using an interdigitated electrode array. The state of strain in the films as a function of thickness and substrate type was correlated with the observed capacitive tunability. The runability for both film series was shown to exhibit markedly different behavior depending on the type of strain, compressive or tensile. Maximum dielectric tunabilities of ∼ 65% were achieved for the thickest films in both film sets, however the tunability of the thinnest films were much higher for the films grown on MgO.

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