Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect

Matthew J. Brahlek, Nikesh Koirala, Jianpeng Liu, Tahir I. Yusufaly, Maryam Salehi, Myung Geun Han, Yimei Zhu, David Vanderbilt, Seongshik Oh

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

Original languageEnglish (US)
Article number125416
JournalPhysical Review B
Volume93
Issue number12
DOIs
StatePublished - Mar 10 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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