Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect

Matthew J. Brahlek, Nikesh Koirala, Jianpeng Liu, Tahir I. Yusufaly, Maryam Salehi, Myung Geun Han, Yimei Zhu, David Vanderbilt, Seongshik Oh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

Original languageEnglish (US)
Article number125416
JournalPhysical Review B
Volume93
Issue number12
DOIs
StatePublished - Mar 10 2016

Fingerprint

Heterojunctions
insulators
Surface states
Molecular beam epitaxy
Vacuum
Chemical analysis
molecular beam epitaxy
platforms
vacuum
probes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Brahlek, Matthew J. ; Koirala, Nikesh ; Liu, Jianpeng ; Yusufaly, Tahir I. ; Salehi, Maryam ; Han, Myung Geun ; Zhu, Yimei ; Vanderbilt, David ; Oh, Seongshik. / Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect. In: Physical Review B. 2016 ; Vol. 93, No. 12.
@article{9d52e8f89b354dce8a2d5fc73d097f3c,
title = "Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect",
abstract = "In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.",
author = "Brahlek, {Matthew J.} and Nikesh Koirala and Jianpeng Liu and Yusufaly, {Tahir I.} and Maryam Salehi and Han, {Myung Geun} and Yimei Zhu and David Vanderbilt and Seongshik Oh",
year = "2016",
month = "3",
day = "10",
doi = "10.1103/PhysRevB.93.125416",
language = "English (US)",
volume = "93",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "12",

}

Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect. / Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; Yusufaly, Tahir I.; Salehi, Maryam; Han, Myung Geun; Zhu, Yimei; Vanderbilt, David; Oh, Seongshik.

In: Physical Review B, Vol. 93, No. 12, 125416, 10.03.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect

AU - Brahlek, Matthew J.

AU - Koirala, Nikesh

AU - Liu, Jianpeng

AU - Yusufaly, Tahir I.

AU - Salehi, Maryam

AU - Han, Myung Geun

AU - Zhu, Yimei

AU - Vanderbilt, David

AU - Oh, Seongshik

PY - 2016/3/10

Y1 - 2016/3/10

N2 - In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

AB - In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

UR - http://www.scopus.com/inward/record.url?scp=84960908677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960908677&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.93.125416

DO - 10.1103/PhysRevB.93.125416

M3 - Article

AN - SCOPUS:84960908677

VL - 93

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 12

M1 - 125416

ER -