Abstract
Piezoelectric ZnO thin films deposited on semiconductor substrates are used for surface and bulk acoustic wave and devices, which offer advantages such as low power consumption, circuit miniaturization, and cost reduction by integration with microwave monolithic integrated circuit technology. Furthermore, temperature compensated surface acoustic wave (SAW) devices, which are attractive for both communication and sensor technologies, may be achieved in the [formula omitted] system as ZnO and Si have positive temperature coefficients of delay, while [formula omitted] has a negative one. In the present work, ZnO thin films were grown on [formula omitted] substrates by metalorganic chemical vapor deposition. The structural properties of the films were investigated using x-ray diffraction, scanning electron microscopy, and scanning probe microscopy. A two-step growth process was developed to obtain ZnO films with both good crystalline quality and surface morphology. The SAW properties of the [formula omitted] system were investigated through modeling and computer simulation based on the transfer matrix method. Acoustic velocity dispersion data obtained from measurement on testing structures agree well with the dispersion curves predicted by computer simulation. The results show that the [formula omitted] system is promising for fabricating low-loss SAW devices.
Original language | English (US) |
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Pages (from-to) | 1850-1853 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2001 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Keywords
- ZnO