Ultrasmall Superconducting Tunnel Junctions

E. L. Hu, Richard Howard, L. D. Jackel, L. A. Fetter, D. M. Tennant

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Extremely small-area superconducting Josephson junctions have been fabricated using a newly developed electron-beam lithography technique. The junctions are composed of Pb-In base electrodes and Pb counter electrodes. Areas of the junctions range from 1 to 3 × 10−10 cm2, The estimated capacitance is ∼10−15 F. Junctions have been produced with resistances of ∼100 Ω which have ∼20-percent hysteresis in the critical current at a temperature of 4 K.

Original languageEnglish (US)
Pages (from-to)2030-2031
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume27
Issue number10
DOIs
StatePublished - Jan 1 1980
Externally publishedYes

Fingerprint

Tunnel junctions
Electrodes
Electron beam lithography
Critical currents
Hysteresis
Capacitance
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hu, E. L., Howard, R., Jackel, L. D., Fetter, L. A., & Tennant, D. M. (1980). Ultrasmall Superconducting Tunnel Junctions. IEEE Transactions on Electron Devices, 27(10), 2030-2031. https://doi.org/10.1109/T-ED.1980.20141
Hu, E. L. ; Howard, Richard ; Jackel, L. D. ; Fetter, L. A. ; Tennant, D. M. / Ultrasmall Superconducting Tunnel Junctions. In: IEEE Transactions on Electron Devices. 1980 ; Vol. 27, No. 10. pp. 2030-2031.
@article{0336e784376641358f06d4a83ddc9bc5,
title = "Ultrasmall Superconducting Tunnel Junctions",
abstract = "Extremely small-area superconducting Josephson junctions have been fabricated using a newly developed electron-beam lithography technique. The junctions are composed of Pb-In base electrodes and Pb counter electrodes. Areas of the junctions range from 1 to 3 × 10−10 cm2, The estimated capacitance is ∼10−15 F. Junctions have been produced with resistances of ∼100 Ω which have ∼20-percent hysteresis in the critical current at a temperature of 4 K.",
author = "Hu, {E. L.} and Richard Howard and Jackel, {L. D.} and Fetter, {L. A.} and Tennant, {D. M.}",
year = "1980",
month = "1",
day = "1",
doi = "10.1109/T-ED.1980.20141",
language = "English (US)",
volume = "27",
pages = "2030--2031",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

Hu, EL, Howard, R, Jackel, LD, Fetter, LA & Tennant, DM 1980, 'Ultrasmall Superconducting Tunnel Junctions', IEEE Transactions on Electron Devices, vol. 27, no. 10, pp. 2030-2031. https://doi.org/10.1109/T-ED.1980.20141

Ultrasmall Superconducting Tunnel Junctions. / Hu, E. L.; Howard, Richard; Jackel, L. D.; Fetter, L. A.; Tennant, D. M.

In: IEEE Transactions on Electron Devices, Vol. 27, No. 10, 01.01.1980, p. 2030-2031.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultrasmall Superconducting Tunnel Junctions

AU - Hu, E. L.

AU - Howard, Richard

AU - Jackel, L. D.

AU - Fetter, L. A.

AU - Tennant, D. M.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Extremely small-area superconducting Josephson junctions have been fabricated using a newly developed electron-beam lithography technique. The junctions are composed of Pb-In base electrodes and Pb counter electrodes. Areas of the junctions range from 1 to 3 × 10−10 cm2, The estimated capacitance is ∼10−15 F. Junctions have been produced with resistances of ∼100 Ω which have ∼20-percent hysteresis in the critical current at a temperature of 4 K.

AB - Extremely small-area superconducting Josephson junctions have been fabricated using a newly developed electron-beam lithography technique. The junctions are composed of Pb-In base electrodes and Pb counter electrodes. Areas of the junctions range from 1 to 3 × 10−10 cm2, The estimated capacitance is ∼10−15 F. Junctions have been produced with resistances of ∼100 Ω which have ∼20-percent hysteresis in the critical current at a temperature of 4 K.

UR - http://www.scopus.com/inward/record.url?scp=0019068142&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019068142&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1980.20141

DO - 10.1109/T-ED.1980.20141

M3 - Article

AN - SCOPUS:0019068142

VL - 27

SP - 2030

EP - 2031

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -