Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

Y. Liu, C. R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, M. Wraback

Research output: Contribution to journalArticle

339 Scopus citations


High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350 °C to 600 °C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 μs and a fall time of 1.5 μs. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.

Original languageEnglish (US)
Pages (from-to)69-74
Number of pages6
JournalJournal of Electronic Materials
Issue number1
StatePublished - Jan 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Liu, Y., Gorla, C. R., Liang, S., Emanetoglu, N., Lu, Y., Shen, H., & Wraback, M. (2000). Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD. Journal of Electronic Materials, 29(1), 69-74. https://doi.org/10.1007/s11664-000-0097-1