Ultraviolet laser-induced ion emission from silicon

Lee Chen; Vladimir Liberman; James A. O'Neill; Zhen Wu; Richard M. Osgood

doi:10.1116/1.575719

Ultraviolet laser-induced ion emission from silicon

Lee Chen, Vladimir Liberman, James A. O'Neill, Zhen Wu, Richard M. Osgood

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Si and Ge ion ejection is observed to occur from clean silicon and germanium surfaces upon excimer laser irradiation at fluences (0–150 mJ/cm²) well below that necessary to cause thermionic emission or melting of the substrate. Quadrupole mass spectrometric techniques were employed for the detection of emitted positive ions. Laser intensity dependent measurements were performed at 193, 248, and 351 nm to elucidate the laser fluence and photon energy threshold behavior of each of the charged species.

Original language	English (US)
Pages (from-to)	1426-1427
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	6
Issue number	3
DOIs	https://doi.org/10.1116/1.575719
State	Published - May 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.575719

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abstract = "Si and Ge ion ejection is observed to occur from clean silicon and germanium surfaces upon excimer laser irradiation at fluences (0–150 mJ/cm2) well below that necessary to cause thermionic emission or melting of the substrate. Quadrupole mass spectrometric techniques were employed for the detection of emitted positive ions. Laser intensity dependent measurements were performed at 193, 248, and 351 nm to elucidate the laser fluence and photon energy threshold behavior of each of the charged species.",

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year = "1988",

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T1 - Ultraviolet laser-induced ion emission from silicon

AU - Chen, Lee

AU - Liberman, Vladimir

AU - O'Neill, James A.

AU - Wu, Zhen

AU - Osgood, Richard M.

PY - 1988/5

Y1 - 1988/5

N2 - Si and Ge ion ejection is observed to occur from clean silicon and germanium surfaces upon excimer laser irradiation at fluences (0–150 mJ/cm2) well below that necessary to cause thermionic emission or melting of the substrate. Quadrupole mass spectrometric techniques were employed for the detection of emitted positive ions. Laser intensity dependent measurements were performed at 193, 248, and 351 nm to elucidate the laser fluence and photon energy threshold behavior of each of the charged species.

AB - Si and Ge ion ejection is observed to occur from clean silicon and germanium surfaces upon excimer laser irradiation at fluences (0–150 mJ/cm2) well below that necessary to cause thermionic emission or melting of the substrate. Quadrupole mass spectrometric techniques were employed for the detection of emitted positive ions. Laser intensity dependent measurements were performed at 193, 248, and 351 nm to elucidate the laser fluence and photon energy threshold behavior of each of the charged species.

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Ultraviolet laser-induced ion emission from silicon

Abstract

All Science Journal Classification (ASJC) codes

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