Ultraviolet laser-induced ion emission from silicon

Lee Chen, Vladimir Liberman, James A. O'Neill, Zhen Wu, Richard M. Osgood

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Si and Ge ion ejection is observed to occur from clean silicon and germanium surfaces upon excimer laser irradiation at fluences (0–150 mJ/cm2) well below that necessary to cause thermionic emission or melting of the substrate. Quadrupole mass spectrometric techniques were employed for the detection of emitted positive ions. Laser intensity dependent measurements were performed at 193, 248, and 351 nm to elucidate the laser fluence and photon energy threshold behavior of each of the charged species.

Original languageEnglish (US)
Pages (from-to)1426-1427
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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