Undercut compensation for xenon difluoride etching of polysilicon thin-films

Jaeseok Jeon, Abdul Haseeb Ma, Kourosh Khosraviani, Albert M. Leung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper presents a new undercut compensation etch technique that provides better control over lateral undercutting of polysilicon thin-films using Xenon Difluoride (XeF2) vapour as the etchant. A significant reduction in the lateral undercutting of polysilicon thin-films was achieved by placing silicon etch buffers beside polysilicon etch samples during the XeF 2 etch process. This technique extends XeF2's etching capability to include fine geometry patterning of polysilicon films to be used as MEMS structural layers.

Original languageEnglish (US)
Title of host publication2007 Canadian Conference on Electrical and Computer Engineering, CCECD
Pages963-965
Number of pages3
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 Canadian Conference on Electrical and Computer Engineering, CCECD - Vancouver, BC, Canada
Duration: Apr 22 2007Apr 26 2007

Publication series

NameCanadian Conference on Electrical and Computer Engineering
ISSN (Print)0840-7789

Other

Other2007 Canadian Conference on Electrical and Computer Engineering, CCECD
Country/TerritoryCanada
CityVancouver, BC
Period4/22/074/26/07

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Keywords

  • Lateral undercut
  • Polysilicon etch
  • Xenon difluorid

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