UV-visible-IR electroluminescence from Si and Ge nanocrystals in a wider bandgap matrix

G. S. Tompa; D. C. Morton; B. S. Sywe; Y. Lu; E. W. Forsythe; J. A. Ott; D. Smith; J. Khurgin; B. A. Khan; N. A. Philips

UV-visible-IR electroluminescence from Si and Ge nanocrystals in a wider bandgap matrix

G. S. Tompa, D. C. Morton, B. S. Sywe, Y. Lu, E. W. Forsythe, J. A. Ott, D. Smith, J. Khurgin, B. A. Khan, N. A. Philips

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

Reported here are electroluminescent properties of nanometer sized particles in an SiO₂ host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. It is believed that dispersion effects of the nanocrystals can account for 'white' light emission. The films have been characterized using PL, Raman, XRD, TEM and SIMS.

Original language	English (US)
Pages (from-to)	701-706
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{9c5ab8c6c86e44ea9cf243a277e1882c,

title = "UV-visible-IR electroluminescence from Si and Ge nanocrystals in a wider bandgap matrix",

abstract = "Reported here are electroluminescent properties of nanometer sized particles in an SiO2 host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. It is believed that dispersion effects of the nanocrystals can account for 'white' light emission. The films have been characterized using PL, Raman, XRD, TEM and SIMS.",

author = "Tompa, {G. S.} and Morton, {D. C.} and Sywe, {B. S.} and Y. Lu and Forsythe, {E. W.} and Ott, {J. A.} and D. Smith and J. Khurgin and Khan, {B. A.} and Philips, {N. A.}",

year = "1995",

language = "English (US)",

volume = "358",

pages = "701--706",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - UV-visible-IR electroluminescence from Si and Ge nanocrystals in a wider bandgap matrix

AU - Tompa, G. S.

AU - Morton, D. C.

AU - Sywe, B. S.

AU - Lu, Y.

AU - Forsythe, E. W.

AU - Ott, J. A.

AU - Smith, D.

AU - Khurgin, J.

AU - Khan, B. A.

AU - Philips, N. A.

PY - 1995

Y1 - 1995

N2 - Reported here are electroluminescent properties of nanometer sized particles in an SiO2 host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. It is believed that dispersion effects of the nanocrystals can account for 'white' light emission. The films have been characterized using PL, Raman, XRD, TEM and SIMS.

AB - Reported here are electroluminescent properties of nanometer sized particles in an SiO2 host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. It is believed that dispersion effects of the nanocrystals can account for 'white' light emission. The films have been characterized using PL, Raman, XRD, TEM and SIMS.

UR - http://www.scopus.com/inward/record.url?scp=0029224525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029224525&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029224525

SN - 0272-9172

VL - 358

SP - 701

EP - 706

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

UV-visible-IR electroluminescence from Si and Ge nanocrystals in a wider bandgap matrix

Abstract

All Science Journal Classification (ASJC) codes

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