Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors

H. T. Yi, Y. Chen, K. Czelen, V. Podzorov

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.

Original languageEnglish (US)
Pages (from-to)5807-5811
Number of pages5
JournalAdvanced Materials
Volume23
Issue number48
DOIs
StatePublished - Dec 22 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • field effect transistors
  • organic single crystals
  • self-assembled monolayers

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