Vapor transport epitaxy, a novel growth technique for compound semiconductors

A. Gurary, G. S. Tompa, C. R. Nelson, R. A. Stall, S. Liang, Y. Lu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

An advanced vapor transport epitaxy (VTE) technique for depositing compound semiconductors is described. The technique operates in the 10-1-10 6 Torr range using elemental, gas, or metalorganic sources. We have previously demonstrated elemental VTE oval defect-free growth of several microns of GaAs at growth rates exceeding one micron per hour, on GaAs (100) and (111) 2° off toward (110) substrates. Elemental VTE is reviewed, and the effects of hydrogen on elemental VTE are discussed. The deposition process for GaAs films using metalorganic sources is described and results are presented. Electrical characteristics, as measured by Hall and sheet resistivity, show that films deposited using monoethylarsine and triethylgallium are n type as deposited. The resolving of several problems common to molecular-beam epitaxy, chemical-beam epitaxy, and metalorganic chemical vapor deposition systems has been the motivation for investigation of this technique.

Original languageEnglish (US)
Pages (from-to)1453-1457
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume10
Issue number4
DOIs
StatePublished - Jul 1992

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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