TY - JOUR
T1 - Vapor transport growth of MnBi2Te4 and related compounds
AU - Yan, J. Q.
AU - Huang, Zengle
AU - Wu, Weida
AU - May, A. F.
N1 - Funding Information:
The authors would thank Michael McGuire, Brian Sales, and Xiaodong Xu for helpful discussions. Work at ORNL was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The STM work at Rutgers was supported by the ARO Award (Grant no. W911NF-20-1-0108). http://energy.gov/downloads/doe-public-access-plan
Funding Information:
The authors would thank Michael McGuire, Brian Sales, and Xiaodong Xu for helpful discussions. Work at ORNL was supported by the U.S. Department of Energy , Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The STM work at Rutgers was supported by the ARO Award (Grant no. W911NF-20-1-0108 ).
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/6/15
Y1 - 2022/6/15
N2 - Motivated by fine tuning of the magnetic and topological properties of MnBi2Te4 via defect engineering, in this work, we report the crystal growth of MnBi2Te4 and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi2Te4 single crystals, I2, MnI2, MnCl2, TeCl4, and MoCl5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. We further successfully grow MnSb2Te4, MnBi2−xSbxTe4, and Sb-doped MnBi4Te7 crystals. A small temperature gradient< 20∘C between the hot and cold ends of the growth ampoule is critical for the successful crystal growth of MnBi2Te4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tune the magnetic and topological properties of these intrinsic magnetic topological insulators where controlling defects is vital.
AB - Motivated by fine tuning of the magnetic and topological properties of MnBi2Te4 via defect engineering, in this work, we report the crystal growth of MnBi2Te4 and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi2Te4 single crystals, I2, MnI2, MnCl2, TeCl4, and MoCl5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. We further successfully grow MnSb2Te4, MnBi2−xSbxTe4, and Sb-doped MnBi4Te7 crystals. A small temperature gradient< 20∘C between the hot and cold ends of the growth ampoule is critical for the successful crystal growth of MnBi2Te4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tune the magnetic and topological properties of these intrinsic magnetic topological insulators where controlling defects is vital.
KW - Defect engineering
KW - Intrinsic magnetic topological insulator
KW - MnBiTe
KW - Vapor transport growth
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U2 - 10.1016/j.jallcom.2022.164327
DO - 10.1016/j.jallcom.2022.164327
M3 - Article
AN - SCOPUS:85125650591
SN - 0925-8388
VL - 906
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 164327
ER -