The most desirable SiC power switches for high temperature applications are SiC JFETs which are non-latch-on and free of gate oxide/insulator voltage-controlled switches. In the vertical form, they can be scaled up to very high current and voltage when implemented in SiC. They also offer the desired negative temperature coefficient for current, and when designed properly, can be made normally-off. Hence, vertical JFETs in SiC have all the desired characteristics of a high power and high temperature SiC switch. In this paper, an implanted-and-trenched gate vertical JFET (IT-JFET) is proposed. Detailed design and modeling results along with device feasibility demonstration are reported. The proposed IT-JFETs are studied by way of two-dimensional numerical simulations by using ISE SiC TCAD Module. The material parameters for 4H-SiC used in the simulations are extracted from the most recently published literatures.