Vertically integrated ZnO-Based 1D1R structure for resistive switching

Yang Zhang; Ziqing Duan; Rui Li; Chieh Jen Ku; Pavel I. Reyes; Almamun Ashrafi; Jian Zhong; Yicheng Lu

doi:10.1088/0022-3727/46/14/145101

Vertically integrated ZnO-Based 1D1R structure for resistive switching

Yang Zhang, Ziqing Duan, Rui Li, Chieh Jen Ku, Pavel I. Reyes, Almamun Ashrafi, Jian Zhong, Yicheng Lu

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 10 ⁶. The conduction mechanisms of the HRS and LRS are Poole-Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 10⁷. This 1D1R structure exhibits high R_HRS/RLRS ratio, excellent rectifying characteristics and robust retention.

Original language	English (US)
Article number	145101
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	14
DOIs	https://doi.org/10.1088/0022-3727/46/14/145101
State	Published - Apr 10 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/46/14/145101

Cite this

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title = "Vertically integrated ZnO-Based 1D1R structure for resistive switching",

abstract = "We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 10 6. The conduction mechanisms of the HRS and LRS are Poole-Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 107. This 1D1R structure exhibits high RHRS/RLRS ratio, excellent rectifying characteristics and robust retention.",

author = "Yang Zhang and Ziqing Duan and Rui Li and Ku, {Chieh Jen} and Reyes, {Pavel I.} and Almamun Ashrafi and Jian Zhong and Yicheng Lu",

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doi = "10.1088/0022-3727/46/14/145101",

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T1 - Vertically integrated ZnO-Based 1D1R structure for resistive switching

AU - Zhang, Yang

AU - Duan, Ziqing

AU - Li, Rui

AU - Ku, Chieh Jen

AU - Reyes, Pavel I.

AU - Ashrafi, Almamun

AU - Zhong, Jian

AU - Lu, Yicheng

PY - 2013/4/10

Y1 - 2013/4/10

N2 - We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 10 6. The conduction mechanisms of the HRS and LRS are Poole-Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 107. This 1D1R structure exhibits high RHRS/RLRS ratio, excellent rectifying characteristics and robust retention.

AB - We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 10 6. The conduction mechanisms of the HRS and LRS are Poole-Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 107. This 1D1R structure exhibits high RHRS/RLRS ratio, excellent rectifying characteristics and robust retention.

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Vertically integrated ZnO-Based 1D1R structure for resistive switching

Abstract

All Science Journal Classification (ASJC) codes

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