Voltage-Insensitive Negative Group Delay Circuit Based on a Stepped-Impedance Distributed Amplifier

Tiedi Zhang, Ruimin Xu, Chung Tse Michael Wu

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


A negative group delay (NGD) circuit with a steady group delay and reduced number of bias is presented in this letter. The proposed NGD circuit based on a distributed amplifier (DA) is insensitive to the biasing voltage level. By adjusting the characteristic impedances of input and output transmission lines of the DA at different stages, NGD characteristics can be realized under the same bias. This results in the fact that only one single bias voltage is needed for the gate to meet the required transfer function between the reversed and input port to synthesize NGD. More importantly, the NGD is no longer sensitive to the transistor's bias voltage, which lays an important foundation for practical applications. The measured results show that, under various bias conditions, the circuit can provide -1 ns group delay level within 0.13-GHz NGD bandwidth. In addition, the gain of the proposed NGD circuit is configurable by adjusting the bias level.

Original languageEnglish (US)
Article number8039249
Pages (from-to)1007-1009
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number11
StatePublished - Nov 2017

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


  • Distributed amplifier (DA)
  • negative group delay (NGD)
  • superluminal group velocity
  • tunable gain


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