Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al 2O 3

Jun Zhu; Ying Chen; Gaurav Saraf; Nuri W. Emanetoglu; Yicheng Lu

doi:10.1063/1.2347695

Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al ₂O ₃

Jun Zhu, Ying Chen, Gaurav Saraf, Nuri W. Emanetoglu, Yicheng Lu

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A voltage tunable surface acoustic wave phase shifter is made of a ZnO based semiconducting/ piezoelectric dual-layer structure on an r-Al ₂O ₃ substrate by using a hybrid growth technology. Piezoelectric and semiconducting ZnO layers are used for acoustic wave excitation and n-type conducting channel, while SiO ₂ serves as the gate insulator. The acoustic velocity of the device is tuned by changing the n-channel conductance with a dc bias. The in-plane anisotropy of the piezoelectric ZnO/r-Al ₂O ₃ structure enables multimode operations. Sezawa and Love wave modes are used to get high effective coupling coefficients, which result in large phase shifts.

Original language	English (US)
Article number	103513
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2347695
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2347695

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@article{357e8a9e33874b08badfb70e9071cf52,

title = "Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al 2O 3 ",

abstract = "A voltage tunable surface acoustic wave phase shifter is made of a ZnO based semiconducting/ piezoelectric dual-layer structure on an r-Al 2O 3 substrate by using a hybrid growth technology. Piezoelectric and semiconducting ZnO layers are used for acoustic wave excitation and n-type conducting channel, while SiO 2 serves as the gate insulator. The acoustic velocity of the device is tuned by changing the n-channel conductance with a dc bias. The in-plane anisotropy of the piezoelectric ZnO/r-Al 2O 3 structure enables multimode operations. Sezawa and Love wave modes are used to get high effective coupling coefficients, which result in large phase shifts.",

author = "Jun Zhu and Ying Chen and Gaurav Saraf and Emanetoglu, {Nuri W.} and Yicheng Lu",

note = "Funding Information: This work has been supported by the National Science Foundation under Grant No. ECS-0088549 and by the New Jersey Commission of Science and Technology under the Research Excellence Center (MUSE) grant.",

year = "2006",

doi = "10.1063/1.2347695",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al 2O 3

AU - Zhu, Jun

AU - Chen, Ying

AU - Saraf, Gaurav

AU - Emanetoglu, Nuri W.

AU - Lu, Yicheng

N1 - Funding Information: This work has been supported by the National Science Foundation under Grant No. ECS-0088549 and by the New Jersey Commission of Science and Technology under the Research Excellence Center (MUSE) grant.

PY - 2006

Y1 - 2006

N2 - A voltage tunable surface acoustic wave phase shifter is made of a ZnO based semiconducting/ piezoelectric dual-layer structure on an r-Al 2O 3 substrate by using a hybrid growth technology. Piezoelectric and semiconducting ZnO layers are used for acoustic wave excitation and n-type conducting channel, while SiO 2 serves as the gate insulator. The acoustic velocity of the device is tuned by changing the n-channel conductance with a dc bias. The in-plane anisotropy of the piezoelectric ZnO/r-Al 2O 3 structure enables multimode operations. Sezawa and Love wave modes are used to get high effective coupling coefficients, which result in large phase shifts.

AB - A voltage tunable surface acoustic wave phase shifter is made of a ZnO based semiconducting/ piezoelectric dual-layer structure on an r-Al 2O 3 substrate by using a hybrid growth technology. Piezoelectric and semiconducting ZnO layers are used for acoustic wave excitation and n-type conducting channel, while SiO 2 serves as the gate insulator. The acoustic velocity of the device is tuned by changing the n-channel conductance with a dc bias. The in-plane anisotropy of the piezoelectric ZnO/r-Al 2O 3 structure enables multimode operations. Sezawa and Love wave modes are used to get high effective coupling coefficients, which result in large phase shifts.

UR - http://www.scopus.com/inward/record.url?scp=33748498477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748498477&partnerID=8YFLogxK

U2 - 10.1063/1.2347695

DO - 10.1063/1.2347695

M3 - Article

AN - SCOPUS:33748498477

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103513

ER -

Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al ₂O ₃

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