Weakening of hardness and modulus of the Si lattice by hydrogen implantation for layer transfer in wafer bonding technology

Diefeng Gu, Helmut Baumgart, Kon Stantin K. Bourdelle, George K. Celler, A. A. Elmustafa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We studied the effect of H implantation on the mechanical properties of Si (001). The hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness of the single crystalline Si lattice in the H implantationinduced damage zone following annealing was observed. The majority of extended defects, i.e. platelets and microcracks, developed during annealing were parallel to the Si surface. The relationship between the morphology of the damage zone and the drop in hardness and modulus is discussed.

Original languageEnglish (US)
Title of host publicationECS Transactions - Semiconductor Wafer Bonding 10
Subtitle of host publicationScience, Technology, and Applications
PublisherElectrochemical Society Inc.
Pages385-391
Number of pages7
Edition8
ISBN (Print)9781566776547
DOIs
StatePublished - 2009
Externally publishedYes
EventSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 14 2008Oct 16 2008

Publication series

NameECS Transactions
Number8
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/14/0810/16/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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