X-ray excitation of DX centers in Si-doped Al0.35Ga0.65As

Yeong Ah Soh, G. Aeppli, Frank M. Zimmermann, E. D. Isaacs, Anatoly I. Frenkel

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity. The energy dependence of the photoconductivity closely follows the simultaneously detected X-ray fluorescence, indicating that photoexcitation of core holes is an efficient primary excitation step for the excitation of DX centers. However, there is no appreciable difference between the Ga and As K-edges, implying a non-local DX center excitation mechanism.

Original languageEnglish (US)
Pages (from-to)214-218
Number of pages5
JournalSurface Science
Volume451
Issue number1
DOIs
StatePublished - Apr 20 2000
EventDIET-8: 8th International Workshop on Desorption Induced by Electronic Transitions - Long Beach, NJ, USA
Duration: Sep 27 1999Oct 1 1999

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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