XAS studies of 1:2:2 transition metal compounds

J. Chen, E. Kemly, Mark Croft, Y. Jeon, X. Xu, S. A. Shaheen, P. H. Ansari

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8 Scopus citations

Abstract

X-ray absorption spectroscopy (XAS) investigations of the electronic structure of 4d transition metal (T) based materials are presented. The sensitivity of the white line (WL) feature at the T-L2,3 edges to the above EF, d-component of the electronic states is first emphasized with a study of the 4d row elements Mo to Ag. This WL based method is then extended to a systematic study of RT2X2 compounds with: R = Gd or Ce; T = Ru, Rh, Pd and Ag; and X = Si, Ge, and Sn. A central interpretation proposed for the 1:2:2 compounds is the identification of a near edge XAS feature with T(4d)-X anti-bonding states split above EF by hybridization. The strength and splitting of this feature are found to decrease in the sequence X = Si→Ge→Sn, consistent with the decreasing bonding interaction. A second interpretation proposed is the decrease of T(4d) states at EF in these compounds relative to the elements.

Original languageEnglish (US)
Pages (from-to)291-296
Number of pages6
JournalSolid State Communications
Volume85
Issue number4
DOIs
StatePublished - Jan 1993

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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