Zeroing in on a zero-temperature coefficient point

I. M. Filanovsky, L. Najafizadeh

Research output: Contribution to conferencePaper

10 Scopus citations

Abstract

The transconductance characteristics of MOS transistors realized in 0.18 μm CMOS technology have a zero-temperature coefficient (ZTC) bias point. The presence of this point Influences performance of both analog and digital circuits. The offset voltage drift in a source-coupled differential pair strongly increases, if the transistor drain currents are equal to the bias currents of ZTC point. It is also impossible to find the drain voltage optimizing the temperature stability of propagation delay in digital circuits. One has to divide the digital circuits in two types. In the first type (CPU circuits) the optimal drain voltage is equal to ZTC bias point voltage of n-channel transistors, in the second case (SRAM circuits) the optimal drain voltage is equal to the absolute value of the ZTC bias point voltage of p-channel transistors.

Original languageEnglish (US)
PagesI271-I274
Publication statusPublished - Dec 1 2002
Externally publishedYes
Event2002 45th Midwest Symposium on Circuits and Systems - Tulsa, OK, United States
Duration: Aug 4 2002Aug 7 2002

Other

Other2002 45th Midwest Symposium on Circuits and Systems
CountryUnited States
CityTulsa, OK
Period8/4/028/7/02

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Device characterization
  • MOSFET
  • Offset voltage drift
  • Propagation delay temperature stability
  • Temperature effects

Cite this

Filanovsky, I. M., & Najafizadeh, L. (2002). Zeroing in on a zero-temperature coefficient point. I271-I274. Paper presented at 2002 45th Midwest Symposium on Circuits and Systems, Tulsa, OK, United States.