ZnO flexible high voltage thin film transistors for power management in wearable electronics

Wen Chiang Hong, Yonghui Zhang, Sze Ying Wang, Yuxuan Li, Navila Alim, Xiaolong Du, Zengxia Mei, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A ZnO-based flexible high voltage thin film transistor (f-HVTFT) is fabricated on a plastic substrate. The f-HVTFT shows a blocking voltage of 150 V, on-current of 170 μA, and off-current of 0.01 pA at a drain bias of 10 V. The maximum recoverable bending radius of the device reaches 11 mm, and the blocking voltage is larger than 120 V while it is under bending. The unique center-symmetric circular structure of the f-HVTFT is particularly useful to the wearable systems, which enable one to operate under bending from arbitrary directions. The ZnO-based f-HVTFT is a promising candidate to be used for power management of self-powered wearable electronic systems.

Original languageEnglish (US)
Article number050601
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number5
DOIs
StatePublished - Sep 1 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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