ZnO Schottky ultraviolet photodetectors

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, H. Shen

Research output: Contribution to journalArticlepeer-review

862 Scopus citations

Abstract

We present the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films. The ZnO films were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition. The metal-semiconductor-metal (MSM) photodetectors were fabricated by using Ag as Schottky contact metal. For comparison, ZnO photoconductive detectors were also fabricated by using Al as ohmic contact metal. I-V characteristics of these devices were analyzed. At a reverse bias of 1 V, the circular Schottky photodiode exhibits a leakage current approximately 5 orders of magnitude smaller than that of its photoconductive counterpart. The photoresponsivity of the ZnO Schottky type MSM UV detector is 1.5 A/W and the leakage current is about 1 nA at 5V bias. The detector shows a fast photoresponse component with a rise time of 12 ns and a fall time of 50 ns.

Original languageEnglish (US)
Pages (from-to)110-113
Number of pages4
JournalJournal of Crystal Growth
Volume225
Issue number2-4
DOIs
StatePublished - May 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A3. Metalorganic chemical vapor desposition
  • B1. ZnO
  • B2. Semiconducting II-VI materials
  • B3. Photodetector

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