ZnO thin film transistor immunosensor with high sensitivity and selectivity

Pavel Ivanoff Reyes, Chieh Jen Ku, Ziqing Duan, Yicheng Lu, Aniruddh Solanki, Ki Bum Lee

Research output: Contribution to journalArticlepeer-review

73 Scopus citations


A zinc oxide thin film transistor-based immunosensor (ZnO-bioTFT) is presented. The back-gate TFT has an on-off ratio of 108 and a threshold voltage of 4.25 V. The ZnO channel surface is biofunctionalized with primary monoclonal antibodies that selectively bind with epidermal growth factor receptor (EGFR). Detection of the antibody-antigen reaction is achieved through channel carrier modulation via pseudo double-gating field effect caused by the biochemical reaction. The sensitivity of 10 fM detection of pure EGFR proteins is achieved. The ZnO-bioTFT immunosensor also enables selectively detecting 10 fM of EGFR in a 5 mg/ml goat serum solution containing various other proteins.

Original languageEnglish (US)
Article number173702
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 25 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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